This resulted in a lessened perform perform and the formation of the Schottky contact among the BrGO and n-type Si substrate. As a consequence of the upper proportion of B-C and B-C3 bonding while in the BrGO/Si gadget than that while in the rGO/Si, the diminished Schottky barrier top of https://www.directivepublications.org/journal-of-applied-nanoscience/